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PolarHV TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH 30N50P
IXTQ 30N50P
IXTT 30N50P
IXTV 30N50P
IXTV 30N50PS
V DSS
I D25
R DS(on)
= 500 V
= 30 A
≤ 200 m ?
TO-247 AD (IXTH)
Symbol
Test Conditions
Maximum Ratings
(TAB)
V DSS
V DGR
V GSS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
500
500
± 30
V
V
V
TO-3P (IXTQ)
D
V GSM
I D25
I DM
I AR
E AR
E AS
dv/dt
P D
T J
T JM
T stg
T L
T SOLD
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 5 ?
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
± 40
30
75
30
40
1.2
10
460
-55 ... +150
150
-55 ... +150
300
260
V
A
A
A
mJ
J
V/ns
W
° C
° C
° C
° C
° C
G
D
S
TO-268 (IXTT)
G
PLUS220 (IXTV)
G
S
S
(TAB)
(TAB)
(TAB)
M d
F C
Mounting torque (TO-247, TO-3P)
Mounting force (PLUS220, PLUS220SMD)
1.13/10 Nm/lb.in.
11 65/2.5 15 N/lb.
PLUS220 SMD(IXTV..S)
Weight
PLUS220, PLUS220SMD
TO-268
TO-3P
TO-247
4
5
5.5
6
g
g
g
g
G
S
(TAB)
G = Gate
D = Drain
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
S = Source
Features
TAB = Drain
BV DSS
V GS = 0 V, I D = 250 μ A
500
V
l
International standard packages
V GS(th)
I GSS
V DS = V GS , I D = 250 μ A
V GS = ± 30 V, V DS = 0 V
3.0
5.0
± 100
V
nA
l
l
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
I DSS
V DS = V DSS
V GS = 0 V
T J = 125 ° C
25
250
μ A
μ A
Advantages
l
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
165
200
m ?
l
l
Space savings
High power density
? 2006 IXYS All rights reserved
DS99415E(04/06)
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相关代理商/技术参数
IXTH30N60L2 功能描述:MOSFET 30 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH30N60P 功能描述:MOSFET 30.0 Amps 600 V 0.24 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH31N15MA 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 31A I(D) | TO-247(5)
IXTH31N15MB 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 31A I(D) | TO-247(5)
IXTH31N20MA 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-247(5)
IXTH31N20MB 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-247(5)
IXTH32P20T 功能描述:MOSFET TrenchP Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH35N25 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 35A I(D) | TO-218VAR